العودة للملف الشخصي

لوحة التحليلات

فراس نذير عبدالقادر حسن أغا

المقالات
١٩
الاستشهادات
٩١
H-Index (GS)
٧
H-Index (Scopus)
٧

Google Scholar

H-Index٧
الاستشهادات٩٠
الوثائق١٣

Scopus

H-Index٧
الاستشهادات٧٦
الوثائق١٢

Web of Science

H-Index٠

المنشورات حسب السنة

اتجاه مؤشر H

اتجاه الاستشهادات

أكثر المقالات استشهادًا

1

Review of nanosheet transistors technology

Tikrit Journal of Engineering Sciences 28 (1), 40-48, 20212021
23 استشهاد
2

Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET

2020 IEEE International Conference on Semiconductor Electronics (ICSE), 64~61, 20202020
12 استشهاد
3

Investigation and design of ion-implanted MOSFET based on (18 nm) channel length

TELKOMNIKA (Telecommunication, Computing, Electronics and Control) 18 (5 …, 20202020
12 استشهاد
4

Temperature characteristics of Gate all around nanowire channel Si-TFET

Journal of Physics: Conference Series2021
12 استشهاد
5

Enhancement Performance of High Electron Mobility Transistor (HEMT) Based on Dimensions Downscaling

International Journal of Electrical and Electronic Engineering & Telecommunications2023
10 استشهاد
6

Electrical characterization of si nanowire GAA-TFET based on dimensions downscaling

International Journal of Electrical and Computer Engineering (IJECE)2021
10 استشهاد
7

Characterization of silicon tunnel field effect transistor based on charge plasma

Indonesian Journal of Electrical Engineering and Computer Science2022
8 استشهاد
8

Down scaling Impact on The ION/IOFF Ratio of Nanosheet FET Digital Applications

2025 15th International Conference on Electrical Engineering, ICEENG 2025, 20252025
2 استشهاد
9

Review on Performance Perspectives of Dielectric Materials Used in Advanced Semiconductor Devices for Various Applications

Kufa Journal of Engineering2026
1 استشهاد
10

Optical Properties for CdSe:Cu Thin Film Prepared by Sputtering Method

International Journal of Latest Engineering and Management Research (IJLEMR)2022
1 استشهاد